t4 - lds - 0231 - 1, rev . 1 (111902) ?2011 microsemi corporation page 1 of 5 1n5415us thru 1N5420US available on commercial versions voidless- hermetically sealed surface mount fast recovery glass rectifiers qualified per mil -prf- 19500/411 qualified levels : jan, jantx, jantxv an d jans description this fast recovery rectifier diode series is military qualified and is ideal for high - reliability applications where a failure cannot be tolerated. these industry - recognized 3.0 a mp rated rectifiers for working peak reverse voltage s from 50 to 600 volts are hermetically sealed with voidless - glass construction using an internal category 1 metallurgical bond. these devices are also available in axial - leaded packages for thru - hole mounting. microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast de vice types in both through - hole and surface mount packages. b sq - melf (d- 5b ) package also available in : b p ackage (axial - leaded) 1n5415 C 1n5420 important: for the latest information, visit our website http://www.microsemi.com . featur es ? surface mount equivalent of jedec registered 1n5 415 thru 1n5420 series . ? voidless hermetically sealed glass package. ? quadruple -l ayer p assivation. ? internal category 1 m etallurgical bonds. ? working p eak r everse v oltage 50 to 600 v olts. ? jan, jantx, jantx v and jans qualification s available per mil - prf - 19500/411 . ? rohs compliant versions available (commercial grade only) . applications / benefits ? fast recovery 3 a mp 50 to 600 volt rectifiers. ? military and other high - reliability applications. ? general rectifier applications including bridges, half - bridges, catch diodes, etc. ? high forward surge current capability. ? extremely robust construction. ? low thermal resistance. ? controlled avalanche with peak reverse power capability. ? inherently radiation hard as described in microsemi micronote 050 . m axim um ratings msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j and t stg - 65 to +175 o c thermal resistance junction - to - end cap r ? j ec 6.5 o c /w f orward surge current @ 8.3 ms half - sine i fsm 80 a average rectified forward current (3) @ t a = + 55 o c @ t a = + 100 o c i o (1, 2) i o (2) 3 2 a working peak reverse voltage 1n5415 us 1n5416 us 1n5417 us 1n5418 us 1n5419 us 1n5420 us v rw m 50 100 200 400 5 00 600 v maximum reverse recovery time (5) 1n5415 us 1n5416 us 1n5417 us 1n5418 us 1n5419 us 1n5420 us t rr 150 150 150 150 250 400 ns solder temperature @ 10 s t sp 260 o c see notes on next page. downloaded from: http:///
t4 - lds - 0231 - 1, rev . 1 (111902) ?2011 microsemi corporation page 2 of 5 1n5415us thru 1N5420US m axim um ratings notes : 1. d erate linearly at 2 2 ma/ o c for 55 o c < t a < 100 o c. 2. above t a = 100 o c, derate linearly at 26.7 ma / o c to zero at t a = 175 o c. 3. these ambient ratings are for pc boards where thermal resistance from mounting po int to ambient is sufficiently controlled wh ere t j( max) does not exceed 175 o c. mechanical and packaging ? case: hermetically sealed voidless hard glass with t ungsten slugs. ? terminals: end caps are c opper with t in/ l ead (sn/pb) finish. note: previous inventory had solid s ilver with t in/ l ead (sn/pb) finish. rohs compliant matte -t in is available for commercial grade only. ? marking: cathode band only. ? polarity: cathode indicated by band. ? tape & reel option: standard per eia - 481 - b. contact factory for quantities. ? weight: 539 m illigrams . ? see p ackage d imensions and recommended p ad l ayout on last page. part nomenclature jan 1n5415 us (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv leve l jans = jans level blank = c ommercial jedec type number see e lectrical characteristics t able rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant melf package symbols & def initions symbol definition v br minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current . v rw m working peak reverse voltage: the maximum peak voltage that can be applied over the operating temperature range excludi ng all transient voltages (ref jesd282 - b). i o average rectified output current: the output current averaged over a full cycle with a 50 hz or 60 hz si ne - wave input and a 180 degree conduction angle. v f maximum forward voltage: the maximum forward voltage the device will exhibit at a specified cur rent. i r maximum reverse current: the maximum reverse (leakage) current that will flow at the sp ecified voltage and temperature. t rr reverse recovery time: the time interval between the instant the current passes through zero when changing f rom the forward direction to the reverse direction and a specified decay point after a peak reverse current occur s. downloaded from: http:///
t4 - lds - 0231 - 1, rev . 1 (111902) ?2011 microsemi corporation page 3 of 5 1n5415us thru 1N5420US electrical characteristics type minimum breakdown voltage v br @ 50 a volts forward voltage v f @ 9 a maximum reverse current i r @ v rwm cap acit ance c v r @ 4 v pf min. volts max . volts 25 o c a 100 o c a 1n5415us 1n5416us 1n5417us 1n5418us 1n5419us 1N5420US 55 110 220 440 550 660 0.6 0.6 0.6 0.6 0.6 0.6 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1 .0 1.0 1.0 1.0 1.0 20 20 20 20 20 20 550 430 250 165 140 120 note 1: i f = 0.5 a, i rm = 1 a, i r(rec) = 0.250 a. downloaded from: http:///
t4 - lds - 0231 - 1, rev . 1 (111902) ?2011 microsemi corporation page 4 of 5 1n5415us thru 1N5420US graphs % piv heating time (sec) figure 1 figure 2 typical reverse current vs. piv maximum thermal impedance v f C v oltage (v) figure 3 typical forward current vs. forward voltage i f C c urrent ( a) z ? jx ( o c/ watt) i f C c urrent (a) downloaded from: http:///
t4 - lds - 0231 - 1, rev . 1 (111902) ?2011 microsemi corporation page 5 of 5 1n5415us thru 1N5420US package dimensions no t es: 1 . di mension s ar e in inches. 2 . m illimete r equi v alent s ar e gi ven fo r genera l informatio n onl y. 3 . d imension s ar e pre - solde r dip. 4 . m inimu m clearanc e o f glas s bod y t o mountin g surfac e on all orientations. 5 . i n accordanc e w it h as me y 14.5 m, diameter s ar e equi v alent t o x sy mbolog y. 6. this p ackage o utline has also previously been identified as d - 5b . pad layout inch millimeters min max min max bl 0 .200 0 .225 5.08 5.72 bd 0 .137 0 .148 3.48 3.76 ect 0 .019 0 .028 0.48 0.71 s 0 .003 --- 0.08 --- inch millimeters a 0.288 7.32 b 0.070 1.78 c 0.155 3.94 note: if mounting requires adhesive separate from the solder, an additional 0.080 inch diame ter contact may be placed in the center between the pads as an optional spot for cement. downloaded from: http:///
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